Partially Cylindrical Fin Field-Effect Transistor: A Novel Device for Nanoscale Applications

In this paper, we have proposed a new partially cylindrical fin field-effect transistor (PC-FinFET), where the upper region of fins has partially cylindrical shape and the lower region of fins, as conventional FinFETs (C-FinFETs), is cubic. The PC-FinFET devices are shown to have better series resistance, hot electron, and subthreshold slope characteristics. Moreover, our simulation result demonstrates an improved output characteristic of the proposed structure due to reduction of self-heating effect. Due to the cylindrical structure of the upper fin region and deleting corner effects in the region, the heat can flow easily, and device temperature decreases. Furthermore, our simulation with 3-D and two-carrier device simulator shows that short-channel effects are controlled better in PC-FinFET than in C-FinFET, which can affect on the performance of the nanoscale devices.