A 60-GHz-band monolithic HJFET LNA incorporating a diode-regulated self-bias circuit

Author

Maruhashi, Kenichi ; Ohata, Keiichi ; Madihian, Mohammad

Author_Institution

Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan

Volume

45

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2256

Lastpage

2260

Abstract

This paper presents a 60-GHz-band GaAs heterojunction FET (HJFET) low-noise amplifier (LNA) operating with a single bias supply. A diode-regulated self-bias circuit was incorporated for suppressing the FET drain-current variations due to threshold voltage nonuniformities. The effect of the bias circuit on the drain-current distribution is carefully discussed based on the FET dc characteristics. A developed three-stage monolithic microwave integrated circuit (MMIC) LNA exhibited an average noise figure of 3.3 dB with 18-dB gain from 58 to 62 GHz. The LNA could operate over 2-5 V with a constant noise figure. The LNA chip size is 1.85 mm×1.07 mm

Keywords

III-V semiconductors; JFET integrated circuits; MMIC amplifiers; field effect MMIC; gallium arsenide; 18 dB; 2 to 5 V; 3.3 dB; 60 GHz; DC characteristics; GaAs; diode-regulated self-bias circuit; drain current distribution; gain; heterojunction FET low-noise amplifier; noise figure; three-stage monolithic HJFET MMIC LNA; threshold voltage; Diodes; Gallium arsenide; Heterojunctions; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave FETs; Microwave integrated circuits; Noise figure; Threshold voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.643828

Filename

643828