Title :
Temperature-dependent kink effect model for partially-depleted SOI NMOS devices
Author :
Lin, S.C. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
1/1/1999 12:00:00 AM
Abstract :
This paper reports a closed-form analytical temperature-dependent kink effect model for the partially-depleted SOI NMOS devices. Based on the body-emitter voltage model, an analytical triggering VDS formula for temperature-dependent kink effect has been obtained. According to the analytical model, at a higher operation temperature and with a lighter thin-film doping density, the onset of the kink effect occurs at a larger VDS
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; analytical model; body emitter voltage model; partially depleted SOI NMOS device; temperature dependent kink effect; thin film doping density; Analytical models; CMOS logic circuits; Electron mobility; Impact ionization; MOS devices; Semiconductor process modeling; Spontaneous emission; Temperature; Thin film devices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
