A GaAs MOSFET with a liquid phase oxidized gate

Author

Wu, Jau-Yi ; Wang, Hwei-Heng ; Wang, Yeong-Her ; Houng, Mau-Phon

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

20

Issue

1

fYear

1999

Firstpage

18

Lastpage

20

Abstract

Low leakage current density (as low as 10/sup -8/ A/cm/sup 2/ at an applied voltage of 5 V) and high breakdown electrical field (larger than 4.5 MV/cm) of the liquid phase chemical-enhanced oxidized GaAs insulating layer enable application to the GaAs MOSFET. The oxide layer is found to be a composite of Ga/sub 2/O/sub 3/, As, and As/sub 2/O/sub 3/. The n-channel depletion mode GaAs MOSFET´s are demonstrated and the I-V curves with complete pinch-off and saturation characteristics can be seen. A transconductance larger than 30 mS/mm can be achieved which is even better than that of MESFET´s fabricated on the same wafer structure.

Keywords

III-V semiconductors; MOSFET; current density; gallium arsenide; oxidation; semiconductor device breakdown; semiconductor device measurement; 30 mS/mm; 5 V; Ga/sub 2/O/sub 3/-As-As/sub 2/O/sub 3/; Ga/sub 2/O/sub 3//As/As/sub 2/O/sub 3/ composite; GaAs; GaAs MOSFET; I-V curves; applied voltage; high breakdown electrical field; liquid phase chemical-enhanced oxidation; liquid phase oxidized gate; low leakage current density; n-channel depletion mode GaAs MOSFET; pinch-off; saturation characteristics; transconductance; Breakdown voltage; Chemicals; Dielectric liquids; Dielectrics and electrical insulation; Electric breakdown; Gallium arsenide; Leakage current; MESFETs; MOSFET circuits; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.737560

Filename

737560