Data regeneration and disturb immunity of T-RAM cells

Author

Mulaosmanovic, H. ; Compagnoni, C. Monzio ; Castellani, N. ; Carnevale, G. ; Ventrice, D. ; Fantini, P. ; Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Benvenuti, A.

Author_Institution

Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Milan, Italy

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

46

Lastpage

49

Abstract

This work presents the first in-depth investigation of data regeneration and disturb immunity of T-RAM cells. Experimental results on deca-nanometer devices reveal that read operations do not compromise cell memory state, contributing, however, to its regeneration only when repeated at high frequency. The separate role of the word-line and the bit-line bias during read is then studied in detail, presenting a clear picture of the physical processes taking place in the device. In so doing, the impact of electrical disturbs on unselected cells coming from read operations in the array are comprehensively addressed.

Keywords

nondestructive readout; random-access storage; T-RAM cells; bit-line bias; data regeneration; decananometer devices; disturb immunity; electrical disturbs impact; physical processes; read operations; unselected cells; word-line bias; Anodes; Arrays; Immune system; Logic gates; Random access memory; Switches; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948754

Filename

6948754