Noise Characterization of Double-Sided Silicon Microstrip Detectors With Punch-Through Biasing

Author

Giacomini, Gabriele ; Bosisio, Luciano ; Rashevskaya, Irina ; Starodubtsev, Oleksandr

Author_Institution

INFN Trieste, Trieste, Italy

Volume

58

Issue

2

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

569

Lastpage

576

Abstract

We report on extensive noise measurements performed on double-sided, AC-coupled, punch-through biased silicon strip detectors. We used a single-channel acquisition chain, reading one strip per side, all other strips being kept grounded. The noise has been measured over a wide range of peaking times and leakage currents, allowing a careful determination of the various noise contributions. We determined the noise contribution of the punch-through mechanism and we observed, on different sensors, two unexpected noise terms, one related to the punch-through current and the other to the presence of resistive layers at the Si/SiO₂ interface.

Keywords

microstrip components; readout electronics; semiconductor device noise; silicon radiation detectors; Si-SiO₂ interface; double-sided silicon microstrip detectors; leakage currents; noise characterization; noise measurements; peaking times; punch-through biasing; resistive layers; silicon radiation detectors; single-channel acquisition chain; Current measurement; Detectors; Leakage current; Noise; Noise measurement; Strips; 1/f noise; capacitance/admittance measurements; microstrip silicon detectors; punch-through biasing; signal to noise ratio; silicon radiation detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2107749

Filename

5720534