Experimental demonstration of improved analog device performance in GAA-NW-TFETs

Author

Schulte-Braucks, Christian ; Richter, Simon ; Knoll, Lars ; Selmi, Luca ; Qing-Tai Zhao ; Mantl, Siegfried

Author_Institution

JARA-FIT, Forschungszentrum Julich, Julich, Germany

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

178

Lastpage

181

Abstract

We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V^-1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μ A/μm at a gate overdrive of V_gt = V_d = -1 V were achieved for the GAA-NW-TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20 nm FinFETs.

Keywords

analogue circuits; field effect transistors; nanowires; tunnel transistors; FinFET; GAA-NW-TFET; electrostatic enhancement; experimental data demonstration; gate all around nanowire; gate overdrive; improved analog device performance; intrinsic gain; maximum transconductance efficiency; output current-saturation; p-type planar; size 10 nm; size 20 nm; tunnel-FET; voltage -1 V; Junctions; Logic gates; MOSFET; Performance evaluation; Resistance; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948789

Filename

6948789