Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Author

Besnard, G. ; Garros, Xavier ; Andrieu, F. ; Nguyen, P. ; Van Den Daele, W. ; Reynaud, P. ; Schwarzenbach, W. ; Delprat, D. ; Bourdelle, Konstantin K. ; Reimbold, Gilles ; Cristoloveanu, S.

Author_Institution

Soitec, Parc Technol. des Fontaines, Bernin, France

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

226

Lastpage

229

Abstract

The Hot Carrier (HC) reliability of NMOS transistors fabricated on biaxially tensile-strain SOI substrates (sSOI) is compared to that of devices fabricated on standard unstrained SOI substrates. It is shown that sSOI-based devices not only exhibit a 10% higher performance in term of I_ON/I_OFF but also show superior HC reliability at same drive current. This reliability improvement may be explained by a better interface quality for sSOI films.

Keywords

CMOS integrated circuits; MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; HC reliability; NMOS transistors; advanced CMOS technology nodes; biaxially tensile-strain SOI substrates; drive current; hot carrier reliability; interface quality; sSOI-based devices; standard unstrained SOI substrates; strained FDSOI nMOSFETs; Degradation; Logic gates; MOSFET; Reliability; Stress; Substrates; FDSOI; Hot Carrier; nMOSFET; reliability; sSOI; strained silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948801

Filename

6948801