Crystallization Behavior of the AgInSbTe Film

The sputtered films of Ag_{4 3}In_6.2Te_30.5Sb₆₀ nominal composition subjected to the various laser powers treatment from the initializer are analyzed. The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXAFS) spectra indicate that, before initialization, the bonding distance between each element atom and the neighbor atoms maintains a fixed value roughly close to that in the crystal structure. It indicates the existence of short-range ordering in the amorphous structure of the film. The phase transformation of this alloy film can be processed just through a quite short displacement of atoms from the amorphous frame to the corresponding crystalline frame; consequently fast phase change is achieved. The discs of proper designed layer structure and initialization power treatment have excellent direct overwriting performance.