Low-Power Gate Driver Circuit for TFT-LCD Application

Author

Lin, Chih-Lung ; Tu, Chun-Da ; Wu, Chia-En ; Hung, Chia-Che ; Gan, Kwang-Jow ; Chou, Kuan-Wen

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1410

Lastpage

1415

Abstract

This paper presents a novel low-power gate driver circuit fabricated from glass by using hydrogenated amorphous silicon (a-Si:H) technology and a standard five-mask process. The tolerance of the threshold voltage shift of the proposed gate driver circuit can be estimated as 30 V by using an H-SPICE simulator. Measurement results indicate that the rising and falling times of the output waveform are equal to those in the initial state. Moreover, the proposed gate driver circuit can operate reliably at a high temperature (T = 120 °C) for over 360 h. Furthermore, the proposed gate driver circuit reduces power consumption by 77.3% over that of a conventional gate driver circuit.

Keywords

driver circuits; elemental semiconductors; liquid crystal displays; low-power electronics; masks; silicon; thin film transistors; H-SPICE simulator; Si:H; TFT-LCD application; hydrogenated amorphous silicon technology; low-power gate driver circuit; power consumption; standard five-mask process; temperature 120 degC; threshold voltage shift; time 360 h; Amorphous silicon; Clocks; Driver circuits; Logic gates; Power demand; Stress; Threshold voltage; Gate driver circuit; power consumption; threshold voltage shift $(Delta V_{rm TH})$;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2186966

Filename

6163379