Hot electron light emission from a GaInAsP/InP structure

Author

Sceats, R. ; Dyson, A. ; Potter, R. ; Boland-Thoms, A. ; Balkan, N. ; Adams, M.J. ; Button, C.C.

Author_Institution

Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK

Volume

148

Issue

1

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

60

Lastpage

64

Abstract

The GaInAsP/InP device described consists of an InP p-n junction with a GaInAsP quantum well placed on the n-side within the depletion region. Two ohmic contacts are diffused through the layers into the structure defining an active surface area. When a voltage is applied across these contacts in the plane of the layers, electrons on the n-side of the structure, and holes on the p-side are heated by the electric field. These carriers are captured by the quantum well and recombine, resulting in light emission from the surface. During operation the large built-in electric field remains. This affects the position of the subbands, and the overlap of the electron and hole wavefunctions via the quantum confined Stark effect (QCSE), and is dependent on the position of the quantum well. The emission wavelength is modelled as a function of position of the GaInAsP quantum well within the built-in electric field of the InP p-n junction using self-consistent numerical one-dimensional solutions of the Poisson and Schrodinger equations. Two similar structures, differing only in the position of their quantum well are investigated experimentally

Keywords

III-V semiconductors; MOCVD; Poisson equation; Schrodinger equation; electroluminescence; electroluminescent devices; gallium arsenide; gallium compounds; hot carriers; indium compounds; laser beams; laser cavity resonators; ohmic contacts; optical fabrication; p-n heterojunctions; quantum confined Stark effect; quantum well devices; quantum well lasers; surface emitting lasers; surface recombination; vapour phase epitaxial growth; wave functions; 1.5 mum; GaInAsP; GaInAsP quantum well; GaInAsP-InP; GaInAsP/InP structure; InP; InP p-n junction; Poisson equations; Schrodinger equations; active surface area; built-in electric field; carrier recombination; depletion region; electric field; electron wavefunctions; electrons; emission wavelength; hole wavefunctions; holes; hot electron light emission; light emission; n-side; ohmic contacts; operation; p-side; quantum confined Stark effect; quantum well; self-consistent numerical one-dimensional solutions; subbands; voltage;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20010131

Filename

914425