Title :
Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications
Author :
Parikh, Primit ; Ibbetson, James ; Mishra, Umesh ; Docter, Daniel ; Le, Minh ; Kiziloglu, Kürsad ; Grider, David ; Pusl, Joe ; Widman, Duncan ; Kehias, Lois ; Jenkins, Thomas
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
A record-high power-added efficiency (PAE) is obtained from a GaAs on insulator (GOI) MESFET. Al2O3 obtained by the wet oxidation of Al0.98GaAs in steam is used as the insulating buffer layer. The insulating buffer results in elimination of buffer leakage and enhanced charge control. 0.35-μm gate-length GOI MESFETs exhibiting a record PAE of 72% at a drain voltage of 3 V at 4 GHz are demonstrated
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; low-power electronics; microwave field effect transistors; microwave power transistors; oxidation; power MESFET; semiconductor-insulator boundaries; 0.35 micron; 3 V; 4 GHz; 72 percent; GaAs on insulator; GaAs-Al2O3; insulating buffer layer; low-voltage GOI MESFET; power-added-efficiency; wet oxidation; wireless technology; Buffer layers; Cable insulation; Etching; Gallium arsenide; Linearity; MESFETs; Oxidation; Power amplifiers; Power generation; Space technology;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
