Title :
RF and mechanical characterization of flip-chip interconnects in CPW circuits with underfill
Author :
Feng, Zhiping ; Zhang, Wenge ; Su, Bingzhi ; Gupta, K.C. ; Lee, Y.C.
Author_Institution :
Center for Adv. Manuf. & Packaging of Microwave, Opt., & Digital Electron., Colorado Univ., Boulder, CO, USA
fDate :
12/1/1998 12:00:00 AM
Abstract :
RF characterization of flip-chip interconnects in coplanar waveguide (CPW) circuits with underfill is reported. The scattering-parameters have been measured up to 40 GHz for GaAs CPW through-line chips flip-chip mounted on an alumina substrate with and without an underfill epoxy. A lumped-element model of flip-chip interconnect has been developed for flip-chip assemblies with and without epoxy. Fatigue life of flip-chip assemblies has been computed for different chip sizes and substrates. The results show feasibility of using underfill encapsulant in microwave/millimeter-wave frequency range
Keywords :
III-V semiconductors; S-parameters; coplanar waveguide components; encapsulation; fatigue; flip-chip devices; gallium arsenide; integrated circuit interconnections; millimetre wave integrated circuits; 40 GHz; GaAs; GaAs CPW through-line; RF characteristics; alumina substrate; coplanar waveguide circuit; fatigue life; flip-chip interconnect; lumped element model; mechanical characteristics; scattering parameters; underfill epoxy encapsulant; Assembly; Bonding; Circuit testing; Coplanar waveguides; Fatigue; Frequency measurement; Gallium arsenide; Integrated circuit interconnections; Radio frequency; Semiconductor device measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
