DocumentCode :
1463264
Title :
A 12.8-Gb/s/link Tri-Modal Single-Ended Memory Interface
Author :
Amirkhany, Amir ; Wei, Jason ; Mishra, Navin Kumar ; Shen, Jie ; Beyene, Wendemagegnehu T. ; Chen, Catherine ; Chin, T.J. ; Dressler, Deborah ; Huang, Charlie ; Gadde, Vijay P. ; Hekmat, Mohammad ; Kaviani, Kambiz ; Lan, Hai ; Le, Phuong ; Mahabaleshwara
Author_Institution :
Rambus Inc., Sunnyvale, CA, USA
Volume :
47
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
911
Lastpage :
925
Abstract :
This paper presents a tri-modal asymmetric memory controller interface that achieves 12.8-Gbps single-ended (SE) signaling over 3" stripline FR4 traces. The controller can be configured to communicate with commercially available GDDR5 and DDR3 memories at 6.4 and 1.6 Gbps, respectively, with no package change. The interface is equipped with a compact voltage-mode driver with 1-tap pre-emphasis, in the WRITE direction, and a linear equalizer (LEQ) and 1-tap decision feedback equalizer (DFE), in the READ direction, to compensate for channel inter-symbol interference (ISI). The receiver front-end contains a supply noise tracking scheme to mitigate reference voltage (VREF) noise. A tri-VCO PLL and an efficient global clock distribution scheme support a wide range of operating frequencies at low power consumption. Finally, the interface also incorporates two overhead links per byte for data-bus encoding (DBE) experiments to mitigate simultaneous switching noise (SSN). Implemented in a 40-nm CMOS process, the × 16 tri-modal interface achieves an energy efficiency of better than 5.0 mW/Gbps per data link at 12.8 Gbps.
Keywords :
CMOS integrated circuits; DRAM chips; decision feedback equalisers; driver circuits; integrated circuit noise; intersymbol interference; low-power electronics; phase locked loops; read-only storage; reference circuits; voltage-controlled oscillators; 1-tap decision feedback equalizer; CMOS process; DBE experiments; DDR3 memory; DFE; GDDR5 memory; ISI; LEQ; READ direction; SE signaling; SSN; VREF noise; WRITE direction; bit rate 1.6 Gbit/s; bit rate 12.8 Gbit/s; bit rate 6.4 Gbit/s; channel inter-symbol interference; compact voltage-mode driver; data-bus encoding experiments; energy efficiency; global clock distribution scheme; linear equalizer; low power consumption; operating frequency; overhead links per byte; receiver front-end; reference voltage noise; simultaneous switching noise; single-ended signaling; size 40 nm; stripline FR4 traces; supply noise tracking scheme; tri-VCO PLL; tri-modal asymmetric memory controller interface; tri-modal single-ended memory interface; Calibration; Clocks; Equalizers; Impedance; Noise; Random access memory; Transistors; DDR3; GDDR5; electrical link; equalizer; memory interface; multi-modal; single-ended;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2185369
Filename :
6164278
Link To Document :
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