A computationally simple model for hysteretic thin-film electroluminescent devices

Author

Jarem, John M. ; Singh, Vijay P.

Author_Institution

Dept. of Electr. Eng., Texas Univ., El Paso, TX, USA

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1834

Lastpage

1841

Abstract

A temporal model based on the Howard, Sahni, and Alt model (1982) that describes hysteresis, the transient and the steady-state values of the interface state charge, and the trapped bulk charge in an AC thin-film electroluminescent device is developed. A fast and efficient numerical procedure that calculates the steady-state hysteretic state of a ZnS:Mn thin-film device is developed for the above model. Graphs of device current and luminance that result from the above model are given

Keywords

II-VI semiconductors; electroluminescent displays; hysteresis; manganese; semiconductor device models; zinc compounds; Howard Sahni Alt model; ZnS:Mn; device current; hysteretic thin-film electroluminescent devices; interface state charge; luminance; model; numerical procedure; steady-state hysteretic state; temporal model; trapped bulk charge; Computational modeling; Electroluminescence; Electroluminescent devices; Electron traps; Hysteresis; Impact ionization; Nonlinear equations; Poisson equations; Thin film devices; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7394

Filename

7394