Breakdown Current Density of CVD-Grown Multilayer Graphene Interconnects

Author

Lee, Kyeong-Jae ; Chandrakasan, Anantha P. ; Kong, Jing

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

32

Issue

4

fYear

2011

fDate

4/1/2011 12:00:00 AM

Firstpage

557

Lastpage

559

Abstract

Graphene wires have been fabricated from large-area multilayer graphene sheets grown by chemical vapor deposition. As the methane concentration increases, a larger percentage of thicker graphene layers are grown. The multilayer graphene sheets have an average thickness of 10-20 nm with sheet resistances between 500 and 1000 Ω/sq. The sheet resistance shows a strong correlation with the average surface roughness. This letter reports measured breakdown current densities up to 4×10⁷ A/cm², where resistive heating is proposed as the main breakdown mechanism. Increasing the uniformity of the graphene layers is important in achieving a higher breakdown current density.

Keywords

chemical vapour deposition; current density; graphene; interconnections; surface roughness; C; breakdown current density; chemical vapor deposition; graphene wires; methane concentration; multilayer graphene interconnects; multilayer graphene sheets; resistive heating; surface roughness; Conductivity; Current density; Electric breakdown; Electrical resistance measurement; Nonhomogeneous media; Resistance; Wires; Current density; graphene; interconnect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2108259

Filename

5723686