InAlN/GaN HEMTs With AlGaN Back Barriers

Author

Lee, Dong Seup ; Gao, Xiang ; Guo, Shiping ; Palacios, Tomás

Author_Institution

Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA

Volume

32

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

617

Lastpage

619

Abstract

This letter studies the effect of AlGaN back barriers in the dc and RF performance of In_0.17Al_0.83N/GaN high-electron mobility transistors grown on SiC substrates. When compared to conventional structures without a back barrier, the back barrier effectively prevents the degradation of drain-induced barrier lowering and significantly improves the output resistance in sub-100-nm-gate-length devices. The reduction in short-channel effects helps to increase the frequency performance of AlGaN back-barrier devices. For a 65-nm gate length, the current gain cutoff frequency (f_T) of a transistor with an AlGaN back barrier is 210 GHz, which is higher than that of the standard device with the same gate length (f_T = 195 GHz).

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; wide band gap semiconductors; AlGaN back barriers; HEMT; In_0.17Al_0.83N-GaN; SiC; drain-induced barrier; frequency 210 GHz; gate length; gate-length devices; high-electron mobility transistors; short-channel effect reductoin; size 65 nm; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Performance evaluation; Radio frequency; AlGaN back barrier; GaN; InAlN; current gain cutoff frequency $(f_{T})$; drain-induced barrier lowering (DIBL); high-electron-mobility transistor (HEMT); output resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2111352

Filename

5723687