A formation of cobalt silicide on silicon field emitter arrays by electrical stress

Author

Lee, Jong Duk ; Jin, Sung Hun ; Shim, Byung Chang ; Park, Byung-Gook

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

22

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

173

Lastpage

175

Abstract

A novel process utilizing electrical stress is proposed for the formation of Co silicide on single crystal silicon (c-Si) FEAs to improve the field emission characteristics. Co silicide FEAs formed by electrical stress (ES) exhibited a significant improvement in turn-on voltage and emission current compared with c-Si FEAs. The improvement mainly comes from the lower effective work function of Co silicide and less blunting of tips during silicidation by electrical stress in an ultra high vacuum (UHV) environment less than 10/sup -8/ torr.

Keywords

cobalt compounds; electron field emission; silicon; vacuum microelectronics; work function; 1E-8 torr; Co silicide; CoSi-Si; Si; Si FEAs; effective work function; electrical stress; emission current; field emission characteristics; field emitter arrays; silicidation; single crystal silicon; tip blunting reduction; turn-on voltage; ultra high vacuum environment; Cobalt; Electric resistance; Field emitter arrays; Frequency; Heating; Silicidation; Silicides; Silicon; Thermal stresses; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.915603

Filename

915603