Title :
Monte Carlo simulation of high field transport and impact ionization in GaAs p+in+ diodes
Author :
Dunn, G.M. ; Rees, G.J. ; David, J.P.R. ; Plimmer, S.A. ; Herbert, D.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
fDate :
12/1/1996 12:00:00 AM
Abstract :
Two Monte Carlo models, one using realistic band structure, the other an analytical approximation, have been applied to the study of impact ionization in bulk GaAs and short p+in+ diodes. The results were compared with experiment. It was found that the faster, simpler analytical model provided an excellent description of the particle dynamics agreeing extremely well both with experiment and the more sophisticated model
Keywords :
III-V semiconductors; Monte Carlo methods; band structure; gallium arsenide; high field effects; impact ionisation; p-i-n diodes; semiconductor device models; GaAs; GaAs p+in+ diodes; Monte Carlo simulation; analytical approximation; analytical model; band structure; bulk GaAs; high field transport; impact ionization; particle dynamics; Analytical models; Diodes; Electrons; Gallium arsenide; Hydrodynamics; Impact ionization; Light emitting diodes; Monte Carlo methods; Neodymium; Numerical models; Scattering;
Journal_Title :
Electron Devices, IEEE Transactions on
