Title :
DC and high-frequency characteristics of GaN-based IMPATTs
Author :
Panda, A.K. ; Pavlidis, D. ; Alekseev, E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/2001 12:00:00 AM
Abstract :
The dynamic characteristics of wurtzite (Wz) phase and zincblende (Znb) phase GaN IMPATTs are reported at D-band and compared with Si and GaAs-based IMPATT devices at the same operating conditions and frequency of operation. It is shown that GaN-based IMPATTs are potential candidates for replacing traditional IMPATTs at high frequency of operation
Keywords :
III-V semiconductors; IMPATT diodes; gallium compounds; impact ionisation; millimetre wave diodes; power semiconductor diodes; wide band gap semiconductors; 110 to 170 GHz; D-band; DC characteristics; EHF; GaN; GaN-based IMPATT devices; HF characteristics; dynamic characteristics; high-frequency characteristics; wurtzite phase; zincblende phase; Computational modeling; Frequency; Gallium arsenide; Gallium nitride; Impact ionization; Power generation; Semiconductor diodes; Semiconductor materials; Solid state circuits; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
