Layout dependence of CMOS latchup

Author

Menozzi, Roberto ; Selmi, Luca ; Sangiorgi, Enrico ; Crisenza, Giuseppe ; Cavioni, Tiziana ; Riccò, Bruno

Author_Institution

Dept. of Electron., Bologna Univ., Italy

Volume

35

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1892

Lastpage

1901

Abstract

This paper presents a detailed analysis of CMOS latchup dependencies on layout and geometrical dimensions. To this purpose test structures have been fabricated featuring butted contacts and guard rings with different values of critical distances. The devices have been experimentally characterized in the triggering and sustaining regime, and numerical simulations have been extensively used to interpret the experimental data. It is shown that great care should be taken in designing protection structures since larger areas do not always lead to enhanced latchup immunity

Keywords

CMOS integrated circuits; integrated circuit technology; integrated circuit testing; CMOS latchup; butted contacts; geometrical dimensions; guard rings; latchup immunity; layout; numerical simulations; protection structures; sustaining regime; test structures; triggering regime; Bipolar transistors; CMOS integrated circuits; CMOS technology; Epitaxial layers; Equivalent circuits; Lead compounds; Numerical simulation; Protection; Substrates; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7402

Filename

7402