Title :
A power amplifier with efficiency improved using defected ground structure
Author :
Lim, Jong-Sik ; Kim, Ho-Sup ; Park, Jun-Seok ; Ahn, Dal ; Nam, Sangwook
Author_Institution :
Appl. Electromagnetics. Lab., Seoul Nat. Univ., South Korea
fDate :
4/1/2001 12:00:00 AM
Abstract :
The authors report the effects of defected ground structure (DGS) on the output power and efficiency of a class-A power amplifier. In order to evaluate the effects of DGS on the efficiency and output power, two class-A GaAs FET amplifiers have been measured at 4.3/spl sim/4.7 GHz. One of them has a 50 /spl Omega/ microstrip line with DGS at the output section, while the other has only 50 /spl Omega/ straight line. It is shown that DGS rejects the second harmonic at the output and yields improved output power and power added efficiency by 1/spl sim/5%.
Keywords :
circuit tuning; harmonics; microwave integrated circuits; microwave power amplifiers; 4.3 to 4.7 GHz; GaAs; GaAs FET amplifiers; class-A power amplifier; defected ground structure; efficiency improvement; output power; power added efficiency; second harmonic rejection; Circuit optimization; Dielectric measurements; Etching; Frequency; Joining processes; Microstrip; Power amplifiers; Power generation; Power measurement; Power system harmonics;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.916333
