0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes

Author

Shin-Nam Hong

Author_Institution

Hankuk Aviation Univ., South Korea

Volume

20

Issue

2

fYear

1999

Firstpage

83

Lastpage

85

Abstract

Junction depth, sheet resistance, dopant activation, and diode leakage current characteristics were measured to find out the optimal processing conditions for the formation of 0.2-μm p/sup +/-n junctions. Among the 2×10/sup 15/ cm/sup -2/ BF₂ implanted crystalline, As or Ge preamorphized silicon, the crystalline and Ge preamorphized samples exhibit excellent characteristics. The thermal cycle of furnace anneal (FA) followed by rapid thermal anneal (RTA) shows better characteristics than furnace anneal, rapid thermal anneal, or rapid thermal anneal prior to furnace anneal.

Keywords

amorphisation; annealing; ion implantation; leakage currents; p-n junctions; rapid thermal annealing; secondary ion mass spectra; semiconductor device measurement; semiconductor diodes; 0.2 mum; 1000 C; 850 C; BF/sub 2/ implantation; SIMS profiles; Si:As; Si:BF/sub 2/; Si:Ge; annealing processes; diode leakage current characteristics; dopant activation; furnace anneal; ion implantation; junction depth; optimal processing conditions; p/sup +/-n junction characteristics; preamorphization; rapid thermal anneal; shallow junctions; sheet resistance; thermal cycle; Boron; Crystallization; Diodes; Electrical resistance measurement; Furnaces; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature; Thickness measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.740659

Filename

740659