Title :
1.5 mu m GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRIN-SCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)
Author :
Kasukawa, A. ; Murgatroyd, I.J. ; Imajo, Y. ; Namegaya, T. ; Okamoto, H. ; Kashiwa, S.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Japan
fDate :
5/11/1989 12:00:00 AM
Abstract :
Very low threshold current density GaInAs/GaInAsP GRIN-SCH-MQW laser diodes grown by MOCVD emitting at 1.5 mu m are demonstrated for the first time. The average threshold current density for 375 mu m cavity length devices (200 mu m width) was 1.2 KA/cm2, which is the lowest value reported for GaInAs/InP laser diodes.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser transitions; optical workshop techniques; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 375 micron; GRIN; GRIN-SCH-MQW; GaInAs-GaInAsP; III-V semiconductors; MOCVD; MQW; cavity length; graded index; heterostructure; laser diodes; metalorganic chemical vapour deposition; multiple quantum well; semiconductor lasers; separate confinement; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890446
