DC and microwave characteristics of InAlAs/InGaAs single-quantum-well MODFETs with GaAs gate barriers

Author

Hong, Won-Pyo ; Bhattacharya, Pallab

Volume

9

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

352

Lastpage

354

Abstract

The design and performance of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors (MODFETs) have been optimized by incorporating a single In/sub 0.53/Ga/sub 0.47/As quantum-well channel and a thin strained GaAs gate barrier layer. These help to lower the output conductance and gate leakage current of the device, respectively. The DC performance of 1- mu m-gate devices is characterized by extrinsic transconductances of 320 mS/mm at 300 K and 450 mS/mm at 77 K and a best value of f/sub T/=35 GHz is derived from S-parameter measurements.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 300 K; 77 K; DC performance; GaAs gate barrier layer; InAlAs-InGaAs; MODFETs; S-parameter measurements; extrinsic transconductances; gate leakage current; microwave characteristics; modulation-doped field-effect transistors; output conductance; single-quantum-well; Design optimization; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Leakage current; MODFETs; Quantum well devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.741

Filename

741