Title :
A 90-ns one-million erase/program cycle 1-Mbit flash memory
Author :
Kynett, Virgil Niles ; Fandrich, Mick Lee ; Anderson, James ; Dix, Patricia ; Jungroth, Owen ; Kreifels, Jerry A. ; Lodenquai, Richard A. ; Vajdic, Brainslav ; Wells, Steven ; Winston, Mark D. ; Yang, Lisa
Author_Institution :
Intel Corp., Folsom, CA, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
Describes the design and performance of a 245-mil2 1-Mbit (128K*8) flash memory targeted for in-system reprogrammable applications. Developed from a 1.0- mu m EPROM-base technology, the 15.2- mu m2 single-transistor EPROM tunnel oxide (ETOX) cell requires only 42 percent of the area required by the previous 1.5- mu m device. One of the most significant aspects of this 1-Mbit flash memory is the one-million erase/program cycle capability. The 1-Mbit memory exhibits 90-ns read access time while the reprogramming performance gives a 900-ms array erase time and a 10- mu s/byte programming rate. Ample erase and program margins through one-million erase/program cycles are guaranteed by the internal verify circuits. Column redundancy is implemented with the utilization of flash memory cells to store repaired addresses.
Keywords :
CMOS integrated circuits; EPROM; VLSI; integrated circuit technology; integrated memory circuits; 1 Mbit; 1 micron; 128 kbyte; 90 ns; 900 ms; EPROM tunnel oxide; ETOX; array erase time; flash memory; in-system reprogrammable; internal verify circuits; one-million erase/program cycle capability; performance; programming rate; read access time; redundancy; scaling; single transistor cell; CMOS technology; Circuits; Costs; EPROM; Flash memory; Flash memory cells; Lithography; Nonvolatile memory; Power supplies; Secondary generated hot electron injection; Tunneling; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1989.572591
