A novel cap-annealing technique using a WNx film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication process

A novel cap-annealing technique for n⁺ implanted layers in GaAs MESFET´s was investigated from the viewpoint of thermal stress relaxation. In this technique, the same metal as the gate´s-tungsten nitride (WN_x) was used for an underlayer of a double-layer annealing cap. FET parameters V_th, K-value, and N_g showed behavior in the short-channel region just as if the short-channel effects were suppressed