Title :
Effects of deep-level states on current/voltage characteristics of heteroepitaxial GaAs
Author :
Das, K. ; Humphreys, T.P. ; Parikh, N.R. ; Posthill, J.B.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
6/22/1989 12:00:00 AM
Abstract :
The first results pertaining to current/voltage measurements of Au contacts fabricated on molecular beam epitaxial GaAs films grown on (1012) sapphire and silicon-on-sapphire (SOS) substrates are presented. A simple analysis of the corresponding I/V characteristics indicates that the dominant transport mechanism in these films is space-charge-limited current conduction in the presence of deep-level states. The nature of these deep-level states appears to be sensitive to the type of crystallographic defects present in the GaAs heteroepitaxial layers.
Keywords :
III-V semiconductors; deep levels; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor-metal boundaries; Au-GaAs-Al 2O 3; Au-GaAs-Si-Al 2O 3; GaAs heteroepitaxial layers; I/V characteristics; MBE; SOS; crystallographic defects; current/voltage characteristics; current/voltage measurements; deep-level states; heteroepitaxial GaAs; sapphire; semiconductors; space-charge-limited current conduction; transport mechanism;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890554
