A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range

Author

Chen, Jian-Song ; Kornegay, Kevin T. ; Ryu, Sei-Hyung

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

34

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

192

Lastpage

204

Abstract

In this paper, we present the design and fabrication of a high-temperature silicon carbide CMOS intelligent gate driver circuit intended for high-power switching applications. Using a temperature-insensitive comparator, several functions including overvoltage and undervoltage, as well as short- and open-load detection, are provided, all of which are operational up to 300°C. These integrated circuits are ideally suited for harsh and high-temperature environments such as automotive and aircraft jet engines

Keywords

CMOS integrated circuits; automotive electronics; circuit stability; comparators (circuits); driver circuits; high-temperature electronics; integrated circuit design; intelligent sensors; mixed analogue-digital integrated circuits; overvoltage protection; power integrated circuits; protection; silicon compounds; wide band gap semiconductors; 300 C; CMOS intelligent gate driver circuit; SiC; aircraft jet engines; automotive environment; fabrication; harsh environments; high-power switching applications; high-temperature operation; integrated circuit; open-load detection; overvoltage detection; protection functions; sensing functions; short-load detection; smart power; stable operation; temperature-insensitive comparator; undervoltage detection; wide temperature range; Aircraft; CMOS technology; Driver circuits; Fabrication; Silicon carbide; Switches; Switching circuits; Temperature distribution; Temperature sensors; Voltage control;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.743772

Filename

743772