Title :
Te Inclusions in CZT Detectors: New Method for Correcting Their Adverse Effects
Author :
Bolotnikov, Aleksey E. ; Babalola, Stephen ; Camarda, Giuseppe S. ; Cui, Yonggang ; Egarievwe, Stephen U. ; Hawrami, R. ; Hossain, Anwar ; Yang, Ge ; James, Ralph B.
Author_Institution :
Brookhaven Nat. Lab., Upton, NY, USA
fDate :
4/1/2010 12:00:00 AM
Abstract :
Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of charge trapped by point defects is proportional to the carriers´ drift time and can be corrected electronically. In the case of Te inclusions, the charge loss depends upon their random locations with respect to the electron cloud. Consequently, inclusions introduce fluctuations in the charge signals, which cannot be easily corrected. In this paper, we describe direct measurements of the cumulative effect of Te inclusions and its influence on the response of CZT detectors of different thicknesses and different sizes and concentrations of Te inclusions. We also discuss a means of partially correcting their adverse effects.
Keywords :
energy loss of particles; point defects; semiconductor counters; tellurium; CZT detectors; CdZnTe detectors; Te inclusions; carrier drift time; charge carriers; charge signals; cumulative effect measurements; electron cloud; ionizing particles; point defects; random locations; Availability; Charge carriers; Clouds; Electron traps; Fluctuations; Grain boundaries; Radiation detectors; Size measurement; Tellurium; Thickness measurement; CdZnTe; crystal defects; radiation detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2042617
