Title :
Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture
Author :
Plis, E.A. ; Krishna, S.S. ; Gautam, N. ; Myers, S. ; Krishna, S.
Author_Institution :
Lobo Venture Lab. 801, SK Infrared, LLC, Albuquerque, NM, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 1011 Jones (Vb = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (Vb = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR).
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared detectors; optical switches; semiconductor superlattices; InAs-GaSb; bias switchable dual-band superlattice detector; cutoff wavelengths; diffusion-limited properties; long-wave infrared detector; midwave IR absorber; midwave infrared detector; pBp architecture; quantum efficiency; Current measurement; Dark current; Detectors; Dual band; IEEE Photonics Journal; Temperature measurement; Wavelength measurement; InAs/GaSb strained layer superlattices (SLS); Optoelectronic materials; nanostructures;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2011.2125949
