A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory

Author

Dong-Il Moon ; Jee-Yeon Kim ; Hyunjae Jang ; Hee-Jeong Hong ; Choong Ki Kim ; Jae-Sub Oh ; Min-Ho Kang ; Jeoung-Woo Kim ; Yang-Kyu Choi

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1236

Lastpage

1238

Abstract

A trigate FinFET with a charge trap gate dielectric is demonstrated for high-speed and long retention memory applications. For a capacitor-less dynamic memory cell, a nitride layer is utilized as a charge storage node and it is directly formed on a silicon channel. In addition, novel gate-stacks allow high-speed and write processes under low voltage WITH remarkably endurable operation of up to 10¹² cycles. By virtue of the charge trap operation, stored data is maintained for >10⁴ s at 125°C.

Keywords

DRAM chips; MOSFET circuits; dielectric materials; elemental semiconductors; silicon; DRAM; Si; capacitor-less dynamic memory cell; charge storage node; charge trap gate dielectric; charge trap operation; gate-stacks; high-speed memory; high-speed-write processes; long retention memory; low voltage WITH; nitride layer; prolonged retention; silicon channel; temperature 125 degC; trigate FinFET; DRAM chips; Dielectrics; FinFETs; Random access memory; SONOS devices; Silicon; DRAM; FinFET; SONOS; capacitor-less 1T-DRAM; charge trap memory; storage class memory; tri-gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2365235

Filename

6937185