DocumentCode
14706
Title
Nano-ampere PTAT current source with temperature inaccuracy <±1°C
Author
Chouhan, S.S. ; Halonen, Kari
Author_Institution
Sch. of Electr. Eng., Dept. of Micro & Nano Sci., Aalto Univ., Espoo, Finland
Volume
51
Issue
1
fYear
2015
fDate
1 8 2015
Firstpage
60
Lastpage
61
Abstract
The architecture for generating a nano-ampere proportional to absolute temperature (PTAT) current source is proposed. The circuit has been designed and fabricated in a standard 180 nm CMOS technology. Measurements were performed on 10 prototypes in the temperature range of -40 to +85°C. The operating supply voltage of the proposed circuit is 850 mV ± 10%. The measured averaged temperature inaccuracy and the linearity of the proposed architecture is between +0.86/- 0.93°C and +0.69/-0.75%, respectively.
Keywords
CMOS integrated circuits; constant current sources; integrated circuit packaging; nanoelectronics; thermal management (packaging); CMOS technology; nano-ampere PTAT current source; proportional to absolute temperature; size 180 nm; temperature -40 C to 85 C; temperature inaccuracy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.3610
Filename
7006820
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