Design and simulation analysis of RF MEMS dual output switch for Ku-band applications

Author

Yazhini, S. ; Sreeja, B.S.

Author_Institution

Dept. of Electron. & Commun. Eng., SSN Coll. of Eng., Chennai, India

fYear

2014

fDate

3-5 April 2014

Firstpage

1188

Lastpage

1191

Abstract

This paper presents the design, fabrication and characterization of RF MEMS dual output switch implemented in silicon substrate of thickness 5 μm. The topology of the switch is cantilever based microelectro mechanical system(MEMS) switch for the performance in the Ku band of frequency for satellite payload application. Along with the process of fabrication, design simulation and the analysis of RF performance parameter characterization of the switch exhibit an insertion loss of around 0.8dB and isolation in the range of 47dB.for the switch structure in Ku band of frequency(12-18GHz).

Keywords

cantilevers; microswitches; microwave switches; Ku-band applications; RF MEMS dual output switch; cantilever based microelectromechanical system; frequency 12 GHz to 18 GHz; satellite payload application; size 5 mum; switch topology; Micromechanical devices; Radio frequency; Satellites; Silicon; Software; Switches; Dual output switch; HFSS(High Frequency Structure Simulator); Intellisuite; RF MEMS; Satellite payload; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Signal Processing (ICCSP), 2014 International Conference on

Conference_Location

Melmaruvathur

Print_ISBN

978-1-4799-3357-0

Type

conf

DOI

10.1109/ICCSP.2014.6950030

Filename

6950030