A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm

Author

Webster, Eric A G ; Richardson, Justin A. ; Grant, Lindsay A. ; Renshaw, David ; Henderson, Robert K.

Author_Institution

Sch. of Eng., Univ. of Edinburgh, Edinburgh, UK

Volume

33

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

694

Lastpage

696

Abstract

A CMOS and back-side illumination-compatible single-photon avalanche diode (SPAD) is reported in 90-nm imaging technology with a peak photon detection efficiency of ≈ 44% at 690 nm and better than ≈20% at 850 nm. This represents an approximately eightfold improvement in near infrared sensitivity over existing CMOS SPADs. This result has important implications for optical communications, time-of-flight ranging, and optical tomography applications. The 6.4-μm-diameter SPAD also achieves the following: low dark count rates of ≈100 Hz with ≈51-ps FWHM timing resolution and a low after-pulsing probability of ≈0.375%.

Keywords

CMOS image sensors; avalanche diodes; optical communication; optical tomography; CMOS imaging technology; back-side illumination-compatible single-photon avalanche diode; optical communication; optical tomography application; photon detection efficiency; size 690 nm; size 850 nm; size 90 nm; time-of-flight ranging; CMOS integrated circuits; CMOS technology; Imaging; Measurement by laser beam; Optical sensors; Photonics; Timing; Back-side illumination (BSI); CMOS; infrared; single-photon avalanche diode (SPAD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2187420

Filename

6170870