DocumentCode :
1471488
Title :
Importance of rapid photothermal processing in defect reduction and process integration
Author :
Singh, Rajendra ; Parihar, Vijay ; Chen, Yuanning ; Poole, Kelvin F. ; Nimmagadda, Srikanth V. ; Vedula, Lakshmi
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
Volume :
12
Issue :
1
fYear :
1999
fDate :
2/1/1999 12:00:00 AM
Firstpage :
36
Lastpage :
43
Abstract :
The smaller dimension devices demand a constant reduction in microscopic and macroscopic defects. To be able to meet the demands of the next-generation integrated circuits (IC´s), we need to develop processing techniques that can increase performance, reliability and yield. Defect reduction forms the first important goal in this direction. We have identified stress as a good indicator of the defects generated during processing. Rapid photothermal processing is demonstrated as a new thermal process that can effectively replace furnace processing and rapid thermal processing. Considering various process constraints, we have presented a model for process optimization. This approach would lead to improvements in performance, reliability and yield, while reducing processing temperature and processing time. Experimental results showing the effectiveness of rapid photothermal processing are also presented
Keywords :
integrated circuit reliability; integrated circuit yield; optimisation; rapid thermal processing; semiconductor process modelling; defect reduction; macroscopic defects; microscopic defects; next-generation integrated circuits; process constraints; process integration; process optimization model; processing temperature; processing time; rapid photothermal processing; reliability; yield; Electronics industry; Integrated circuit reliability; Manufacturing processes; Nanoelectronics; Process design; Rapid thermal processing; Semiconductor device manufacture; Silicon; Temperature; Thermal stresses;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.744520
Filename :
744520
Link To Document :
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