Unified MOSFET compact I-V model formulation through physics-based effective transformation

Author

Zhou, Xing ; Lim, Khee Yong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

Volume

48

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

887

Lastpage

896

Abstract

A one-region compact I_ds model from subthreshold to saturation, which resembles the same form as the well-known long-channel model but includes all major short-channel effects (SCEs) in deep-submicron (DSM) MOSFETs, has been formulated through physics-based effective transformation. The model has 23 process-dependent fitting parameters, which requires an 11-step, one-iteration extraction procedure. The new approach to modeling channel-length modulation (CLM), subthreshold diffusion current, and edge-leakage current, all in a compact form, has been verified with the 0.25-μm experimental data. The model covers the full range of gate length (without “binning”) and bias conditions, and can be correlated to true process variables for aiding technology development

Keywords

MOSFET; iterative methods; leakage currents; semiconductor device models; 0.25 micron; MOSFET; channel-length modulation; compact I-V model formulation; edge-leakage current; major short-channel effects; one-iteration extraction procedure; one-region compact I_ds model; physics-based effective transformation; process variables; process-dependent fitting parameters; subthreshold diffusion current; Circuit simulation; Circuit synthesis; Collision mitigation; Data mining; Equations; Fluctuations; MOSFET circuits; Parameter extraction; Semiconductor process modeling; Solid modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.918236

Filename

918236