Title :
2 GHz controlled current conveyor in standard 0.8 μm BiCMOS technology
Author :
Seguin, F. ; Fabre, A.
Author_Institution :
CNRS, Bordeaux I Univ., Talence, France
fDate :
3/15/2001 12:00:00 AM
Abstract :
A new controlled current conveyor operating in class A and implemented using a low-cost industrial BiCMOS 0.8 μm process is described. Its electrical characteristics (voltage and current transfers, parasitic impedances) have been measured. With a bias current of 500 μA and supplied under ±2.2 V, the measurement results show that the circuit exhibits very large -3 dB bandwidths: from DC to 4.5 GHz for the voltage transfer (between Y and X) and from DC to 2 GHz for the current transfer (between X and Z)
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; analogue processing circuits; current conveyors; integrated circuit measurement; 0 to 4.5 GHz; 0.8 μm BiCMOS technology; 0.8 mum; 2 GHz; 2 GHz controlled current conveyor; bias current; circuit bandwidth; class A operation; current transfer; electrical characteristics; parasitic impedances; voltage transfer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010239
