Title :
a-Si:H TFTs using low-temperature CVD of Si3H8
Author :
Breddels, P.A. ; Kanoh, H. ; Sugiura, O. ; Matsumura, M.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
a-Si:H layers have been deposited by chemical vapour deposition (CVD) at 350 degrees C using Si3H8 as the source gas. Inverted staggered gate thin-film transistors (TFTs) were fabricated with plasma-CVD-grown SiNx as the gate insulator. Electron field-effect mobilities of 0.45 cm2/Vs were obtained and the on/off ratio in the drain current was 106.
Keywords :
CVD coatings; amorphous semiconductors; hydrogen; silicon; silicon compounds; thin film transistors; 350 degC; Si 3H 8; SiN x-Si:H; drain current; gate insulator; inverted staggered gate; low-temperature CVD; on/off ratio; source gas; thin-film transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891097
