Title :
Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD
Author :
Dong, Shurong ; Jin, Hao ; Miao, Meng ; Wu, Jian ; Liou, Juin J.
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
fDate :
5/1/2012 12:00:00 AM
Abstract :
A novel capacitance coupling complementary dual-direction silicon-controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5-μm BCD process. The trigger voltage of CCCDSCR can be adjusted by coupling capacitance to meet different protection requirements. Compared with traditional lateral double-diffusion NMOS, LDSCR, stacked field-oxide device, and stacked low-voltage-triggering SCR devices, the CCCDSCR has appropriate low trigger voltage of 27.3 V, high holding voltage of 24.3 V, and highest figure of merit (FOM) according to our defined FOM.
Keywords :
electrostatic discharge; thyristors; LDSCR; and stacked low-voltage-triggering SCR device; capacitance coupling complementary dual-direction silicon-controlled rectifier; dual-direction SCR; figure of merit; high-voltage ESD; high-voltage electrostatic discharge protection; lateral double-diffusion NMOS; stacked field-oxide device; CMOS integrated circuits; Capacitance; Couplings; Electrostatic discharges; Kirk field collapse effect; Thyristors; Voltage measurement; Capacitance coupling; dual-direction silicon-controlled rectifier (SCR); electrostatic discharge (ESD); high-voltage protection;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2188015
