DocumentCode :
1473057
Title :
Some aspects of Gunn effect oscillators
Author :
Robson, P.N. ; Mahrous, S.M.
Volume :
30
Issue :
6
fYear :
1965
fDate :
12/1/1965 12:00:00 AM
Firstpage :
345
Lastpage :
352
Abstract :
The general view is that the mechanism responsible for the Gunn effect must be similar to that proposed independently by Ridley and Watkins and by Hilsum several years ago. This theory is described and the experiments that have been reported to substantiate it indirectly are reviewed briefly. A tentative theory to explain the wide tuning range observed when Gunn specimens are placed in a suitable cavity resonator (in some cases almost one octave) is advanced. Some experimental results, giving limited confirmation of the theory are presented.
Keywords :
Gunn effect; cavity resonators; semiconductor devices; semiconductors; tuning;
fLanguage :
English
Journal_Title :
Radio and Electronic Engineer
Publisher :
iet
ISSN :
0033-7722
Type :
jour
DOI :
10.1049/ree.1965.0112
Filename :
5266848
Link To Document :
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