Influence of perimeter recombination on high-efficiency GaAs p/n heteroface solar cells

Perimeter recombination currents have been characterized for 0.5-cm-square and 2-cm-square p/n GaAs solar cells. Measurements show that perimeter recombination dominates the n=2 dark current component of these high-efficiency solar cells. The results also suggest that perimeter recombination will be substantial even in much-larger-area solar cells. Although little influence on open-circuit voltage is expected, perimeter recombination may adversely affect the cell´s one-sun fill factor. Because of its importance to one-sun applications, recombination at the junction perimeter must be suppressed before GaAs solar cells approach their limiting conversion efficiencies.<>