An optimized method for computer-aided DC measurements of power MOS transistors

Author

Gracia, Javier ; Aranceta, FJavier

Author_Institution

Dept. de Electr., Electron. y Autom., Centro de Estudios e Investigaciones Tecnicas de Guipuzcoa, San Sebastian, Spain

Volume

37

Issue

3

fYear

1988

fDate

9/1/1988 12:00:00 AM

Firstpage

393

Lastpage

397

Abstract

An intelligent data acquisition system for the characterization of power NMOS transistors has been developed. The system uses a pulsed method with adaptive duty cycle. The temperature is empirically determined by using the transistor under test as a thermometer. An accurate database can be obtained for modeling or parameter-extraction purposes. Rules for the rejection of anomalous data due to thermal or electrical transitions have been included in the software. A criterion based on the first and second derivatives has shown that the acquired database quality is better when these rules are used. This criterion is independent of the model considered and the parameter-extraction algorithm used

Keywords

characteristics measurement; circuit analysis computing; computerised instrumentation; data acquisition; electric variables measurement; insulated gate field effect transistors; power transistors; semiconductor device testing; NMOS; adaptive duty cycle; characteristics measurement; computer-aided DC measurements; electrical transitions; insulated gate FET; intelligent data acquisition; modeling; parameter-extraction; parameter-extraction algorithm; power MOS transistors; pulsed method; rejection of anomalous data; thermal transitions; Data mining; Databases; Intelligent systems; MOSFETs; Optimization methods; Parameter extraction; Power measurement; Power system modeling; Power transistors; Temperature;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.7462

Filename

7462