Number and density of states in quantum semiconductor structures

Author

Guthrie, Daniel K. ; Gaylord, Thomas K. ; Glytsis, Elias N.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

39

Issue

4

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

465

Lastpage

470

Abstract

Pushed by the semiconductor industry to achieve greater speed and functionality, device dimensions are becoming sufficiently small to exhibit prominent quantum mechanical effects. In addition, devices are now being developed that utilize these quantum effects. The number and density of states are fundamentally important in the operation of any quantum device. Traditionally in a classroom setting, one-dimensional (1-D), two-dimensional (2-D), and three-dimensional (3-D) continuum approximations are presented to analyze the quantum wire, well, and box, respectively. As shown in this paper, the exact number and density of states can be straightforwardly calculated by students for real semiconductor quantum structures. These results clearly illustrate the overall true 3-D form of each of these structures. These correct calculations also reveal an overestimation in the number of states when using the continuum approximations

Keywords

approximation theory; electronic density of states; electronic engineering education; semiconductor device models; semiconductor quantum dots; semiconductor quantum wells; semiconductor quantum wires; classroom; continuum approximations; device dimensions; electronics education; quantum box; quantum semiconductor structures; quantum well; quantum wire; state density; state number; students; Electrons; Molecular beam epitaxial growth; Optical filters; Optical refraction; Potential well; Quantum dots; Quantum mechanics; Semiconductor devices; Two dimensional displays; Wire;

fLanguage

English

Journal_Title

Education, IEEE Transactions on

Publisher

ieee

ISSN

0018-9359

Type

jour

DOI

10.1109/13.544799

Filename

544799