Partially doped GaAs single-quantum-well FET

Author

Ren, Fengyuan ; Tu, C.W. ; Kopf, R.F. ; Wu, C.S. ; Chandra, Aniruddha ; Pearton, S.J.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

25

Issue

24

fYear

1989

Firstpage

1675

Lastpage

1677

Abstract

Reports on 1 mu m gate length n⁺ AlGaAs/partially doped GaAs/n⁺ AlGaAs single-quantum-well (PDSQW) FETs with a high extrinsic peak transconductance of 300 mS/mm. An acceptably high transconductance is maintained over 2.8 V gate-voltage swing. The FETs demonstrate a sharp pinch-off around V_g=-2 V, and a full channel current of 820 mA/mm was observed at room temperature. The PDSQW structures exhibit a two-dimensional electron-gas (2DEG) sheet charge density as high as 3.4*10¹² cm^-2 with mobility of 17000 cm²/Vs at 77 K. The PDSQW structure combines the advantages of both the conventional single-quantum-well (SQW) structure (high mobility and good carrier confinement) and the doped-channel structure (high carrier density).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor doping; semiconductor quantum wells; 1 micron; 2 V; 2.8 V; 300 mS/mm; 77 K; AlGaAs-GaAs-AlGaAs; FET; HEMT; PDSQW structures; SDHT; carrier confinement; channel current; doped-channel structure; extrinsic peak transconductance; gate-voltage swing; high carrier density; mobility; partially-doped single quantum well; room temperature; semiconductors; sharp pinch-off; sheet charge density; two-dimensional electron-gas;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19891123

Filename

91862