Dynamics of the kink effect in InAlAs/InGaAs HEMTs

Author

Ernst, A.N. ; Somerville, M.H. ; del Alamo, J.A.

Author_Institution

MIT, Cambridge, MA, USA

Volume

18

Issue

12

fYear

1997

Firstpage

613

Lastpage

615

Abstract

We have carried out pulsed measurements of the kink effect in InAlAs/InGaAs HEMT´s on InP with nanosecond resolution. Our measurements show that the kink´s characteristic time constant is strongly dependent on V/sub DS/, i.e., it drops by more than three decades, from 100 μs down to 50 ns, between low and high values of V/sub DS/. This suggests that the kink should not be operational for frequencies in the microwave and millimeter wave regimes. We also find that the kink turn-on dynamics correlate with impact ionization. In particular, the inverse of the kink´s characteristic time constant follows a classical impact ionization behavior.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; 100 mus to 50 ns; InAlAs-InGaAs; InAlAs/InGaAs HEMTs; InP; InP substrate; characteristic time constant; drain current rise; impact ionization; kink effect dynamics; kink turn-on dynamics; microwave region; millimeter wave regime; nanosecond resolution; pulsed measurements; Frequency measurement; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Pulse amplifiers; Pulse measurements; Pulsed power supplies; Vehicle dynamics;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.644087

Filename

644087