Title :
Optical measurement system for characterizing compound semiconductor interface and surface states
Author :
Passlack, Matthias ; Legge, Ronald N. ; Convey, Diana ; Yu, Zhiyi ; Abrokwah, Jonathan K.
Author_Institution :
Phoenix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA
fDate :
10/1/1998 12:00:00 AM
Abstract :
An optical measurement system that is useful for the characterization of interface and surface states on a wide variety of compound semiconductor material systems has been developed. The PC-based measurement system, using argon ion laser excitation from 10-1 to 104 W/cm2 power density and a light spot focused to a FWHM of 35 μm, acquires photoluminescence (PL) spectra from a semiconductor material system over a dynamic intensity range of more than eight orders of magnitude. The measured PL intensities that are evaluated using an extended, numerical self-consistent drift-diffusion model provide properties of interface and surface states such as density and capture cross section as well as derived quantities including nonradiative interface and surface recombination velocity
Keywords :
III-V semiconductors; gallium arsenide; interface states; microcomputer applications; photoluminescence; semiconductor heterojunctions; semiconductor-insulator boundaries; spectroscopy computing; surface recombination; surface states; AlGaAs-GaAs; Ar ion laser excitation; Ga2O3-GaAs; GaAs; PC-based measurement system; PL intensities; compound semiconductor material systems; dynamic intensity range; interface states; light spot focusing; numerical self-consistent drift-diffusion model; optical measurement system; photoluminescence spectra; surface recombination velocity; surface state capture cross section; surface state density; surface states; Argon; Density measurement; Dynamic range; Laser excitation; Particle beam optics; Photoluminescence; Power lasers; Power measurement; Semiconductor lasers; Semiconductor materials;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
