IGBT negative gate capacitance and related instability effects

Author

Omura, I. ; Ohashi, H. ; Fichtner, W.

Author_Institution

Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

18

Issue

12

fYear

1997

Firstpage

622

Lastpage

624

Abstract

For high collector voltages, Insulated Gate Bipolar Transistors (IGBTs) exhibit a negative gate capacitance. In this condition, a p-channel inversion layer is formed on the N-base surface. The positive charges in the p-channel induce negative charges in the MOS gate electrode. This results in a negative gate capacitance. As a consequence of this negative capacitance, IGBT operation is inherently unstable, leading to current redistribution between cells or even chips.

Keywords

capacitance; current distribution; current fluctuations; insulated gate bipolar transistors; inversion layers; semiconductor device models; semiconductor device reliability; 1200 V; IGBT; MOS gate electrode; N-base surface; current redistribution; high collector voltages; inherent instability; instability effects; negative gate capacitance; p-channel inversion layer; p-channel positive charges; Bipolar transistors; Capacitance; Charge measurement; Controllability; Current measurement; Electrodes; Insulated gate bipolar transistors; Laboratories; Low voltage; Safety;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.644090

Filename

644090