DocumentCode :
1474146
Title :
A novel high performance stacked LDD RF LDMOSFET
Author :
Cai, Jun ; Ren, Changhong ; Balasubramanian, N. ; Sin, Johnny K O
Author_Institution :
Inst. of Microelectron., Singapore
Volume :
22
Issue :
5
fYear :
2001
fDate :
5/1/2001 12:00:00 AM
Firstpage :
236
Lastpage :
238
Abstract :
A novel silicon RF lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) structure, using a simple yet effective concept of stacked lightly doped drain (LDD), is proposed. The stacked layers of LDD minimizes the on-state resistance of the transistor due to the n+ doping used in the top LDD layer, and also raises the device breakdown voltage due to the charge compensation in the composite LDD region. Therefore, for the same blocking voltage rating, the stacked LDD structure allows the LDMOSFET to have a higher current handling capability. This in turn causes the transconductance Gm to be higher, leading to higher RF performance for the power device. Measured results show that a 67% improvement in I/sub dsat/ and a 16% improvement in forward blocking voltage are obtained. Furthermore, the new device achieves an increase in transconductance of 145% and improves cut-off frequency by 108% at a gate voltage of 10 V.
Keywords :
UHF field effect transistors; charge compensation; doping profiles; elemental semiconductors; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device breakdown; silicon; 0.5 to 10.5 GHz; 10 V; RF performance; Si; blocking voltage rating; charge compensation; current handling capability; cutoff frequency; device breakdown voltage; forward blocking voltage; gate voltage; high performance RF MOSFET; lateral double-diffused MOSFET; n+ doping; onstate resistance; power device; stacked LDD RF LDMOSFET; stacked lightly doped drain; transconductance; Breakdown voltage; Cutoff frequency; FETs; Gallium arsenide; Low voltage; Power transistors; Radio frequency; Semiconductor device doping; Silicon compounds; Transconductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.919240
Filename :
919240
Link To Document :
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