Making the transition

High density interconnect technology shows promise for the integration of compact multi-substrate devices in the millimetre-wave range and beyond. High-frequency integrated circuits that combine organic and silicon substrates are being investigated by researchers at the Georgia Institute of Technology in the US. The researchers have shown, for the first time, the integration of low-loss wideband high density interconnects in a multi-substrate for operation in the V and W bands. "The results are promising for multi-substrate integration which takes advantage of different substrate properties for each device," said David Chung, a researcher at Georgia Tech. "For example, small ICs that are on Si or SiGe can be compactly integrated with an antenna that shows better performance on a substrate with a lower dielectric constant".